RPI Engineering
Daniel Gall

Daniel Gall

Professor

Nanotechnology, Electronic Materials, Thin Film Deposition, First-principles calculations, Materials characterization

Professor Gall is member of the Materials Science and Engineering Department at the Rensselaer Polytechnic Institute. He received his Diploma from the University of Basel, Switzerland, in 1994, and his Ph.D. from the University of Illinois at Urbana-Champaign in 2000. Prof. Gall has been a Visiting Scientist at the Frederick Seitz Materials Research Laboratory, Illinois, and a Visiting Professor at the Ecole Polytechnic Federal Lausanne. He has served as Assistant Editor and Editorial Board Member for Thin Solid Films, as Associate Editor for the Journal of Vacuum Science and Technology A, as chair for the AVS Advanced Surface Engineering Division, as proceedings editor, session, symposium, and program chair for the AVS International Symposium and the International Conference for Metallurgical Coatings and Thin Films. Prof. Gall’s research focuses on the development of an atomistic understanding for thin film growth, with particular interest in transition-metal nitride coatings, ion-surface interactions, and glancing angle deposition. He has pioneered a multiple length-scale approach to explain texture evolution in hard-coatings, has shown how low-energy ion-irradiation can be employed to control surface diffusion processes and resulting microstructures, and has developed a variety of uniquely shaped nanostructure architectures by exploiting atomic shadowing effects during physical vapor deposition. His research on novel transition-metal nitrides was identified as one of “the 100 most important scientific discoveries during the past two and a half decades, supported by the US Department of Energy’s Office of Science”. He also won the 2006 Alfred H. Geisler Memorial Award for “Outstanding Contributions in Education and Thin Film Growth Research,” the Faculty Early Career Development (CAREER) Award from the National Science Foundation, the 2007 Outstanding Research Award from the Rensselaer School of Engineering, the 2008 Early Career Award for “Excellence in Education and Outstanding Research in the Field of Thin Film and Nanostructure Growth,” the 2008 IBM Faculty Award for research on “Post-CMOS Nanoelectronics,” the 2011 NSF Ceramics Best Highlight Award, and the 2011 SPIE Thin Films IV Best Presentation Award. Professor Gall holds two US patents, has authored 3 book chapters and over 90 peer-reviewed journal articles, and has presented his research results in over 60 invited lectures in North America and Europe. His students won over 20 poster competitions, best paper awards, and best microscopy awards. Prof. Gall’s research is funded by the National Science Foundation, the US Department of Defense, the Semiconductor Research Corporation, the ACS Petroleum Research Fund, IBM, and the State of New York. http://www.rpi.edu/~galld

Education

Ph.D. Physics (University of Illinois, 2000), M.S. Physics (University of Basel, Switzerland, 1994), B.S. Physics (University of Basel, Switzerland)

Publications

  • R.P. Deng, B. Ozsdolay, P.Y. Zheng, S.V. Khare, and D. Gall, “Optical and transport measurement and first-principles determination of the ScN band gap,” Phys. Rev. B 90, 045104 (2015).
  • B. D. Ozsdolay, C. P. Mulligan, M. Guerette, L. Huang, and D. Gall, “Epitaxial growth and properties of cubic WN on MgO(001), MgO(111), and Al2O3(0001),” Thin Solid Films, 590, 276 (2015).
  • C.P. Mulligan, R. Wei, G. Yang, P. Zheng, R. Deng, D. Gall, “Microstructure and age hardening of C276 alloy coatings,” Surf. Coat. Technol. 270, 299 (2015).
  • P. C. Jamison, Takaaki Tsunoda, T. Vo, J. Li, H. Jagannathan, S. R. Shinde, V. K. Paruchuri, D. Gall, “SiO2 Free HfO2 Gate Dielectrics by Physical Vapor Deposition,” IEEE Trans. Electron Devices, 62, 2878 (2015).
  • P.Y. Zheng, R.P. Deng, and D. Gall, “Ni Doping on Cu Surfaces: Reduced Copper Resistivity,” Appl. Phys. Lett. 105, 131603 (2014).
  • Mathieu Cesar, Dongping Liu, Daniel Gall, and Hong Guo, “Calculated Resistances of Single Grain Boundaries in Copper,” Phys. Rev. Appl. 2, 044007 (2014).
  • Z. T. Y. Liu, D. Gall and S. V. Khare, “Electronic and bonding analysis of hardness in pyrite-type transition metal pernitrides,” Phys. Rev. B 90, 134102 (2014).
  • R.P. Deng, S.R. Evans, and D. Gall, “Bandgap in Al1-xScxN,” Appl. Phys. Lett. 102, 112103 (2013).
  • J. S. Chawla, F. Gstrein, K. P. O’Brien, J. S. Clarke, and D. Gall, “Electron scattering at surfaces and grain boundaries in Cu thin films and wires,” Phys. Rev. B, 84, 235423 (2011).
  • X.Y. Zhang, J.S. Chawla, B.M. Howe, D. Gall, “Variable-range hopping conduction in epitaxial CrN(001),” Phys. Rev. B, 83, 165205 (2011).