BAWFET: A Monolithically Integrated RF FET Amplifier + BAW Filter on a Multifunctional AlN Platform
Aluminum nitride (AlN) is widely used as the piezoelectric layer for RF acoustic filters for its high electromechanical coupling coefficient, high acoustic phase velocity, as well as low acoustic and dielectric loss. In addition to being an excellent piezoelectric, AlN is also an ultra-wide bandgap semiconductor used in UV photonics and RF transistor amplifiers. An exciting opportunity enabled by Bulk Acoustic Wave (BAW) filters is the monolithic integration with active devices such as high-electron-mobility-transistor (HEMT) amplifiers.
