The resistance bottleneck in metal-interconnect scaling calls for new interconnect materials. Topological semimetals provide a potential solution. After reviewing the desirable properties of topological semimetals for back-end-of-line (BEOL) interconnects, we use CoSi as an example to demonstrate the decreasing resistance-area product with scaling and illustrate the material-search guidelines.
Dr. Ching-Tzu Chen is an IBM Research Staff Member with a PhD in physics from Caltech. Her research topics include topological materials, emergent memory technologies for AI hardware, spintronics, novel superconductors, nanomaterials and nanotechnology. She received the IBM Outstanding Technical Achievement Awards in 2010 and 2018 for the work on nano-spintronics and superconductivity. In 2016, she served as a Technical Assistant to the Director of Physical Sciences Department. Since then she has participated in the formation and liaison management of the SRC Joint University Microelectronics Program (JUMP), from program definition, proposal evaluation, to progress review. She currently represents IBM on JUMP’s Science Advisory Board. She also serves as a reviewer on NSF panels and for DoE's Basic Energy Sciences.